DONG Zhihua - 董志华

Author：Huajie KeDate：2019-09-19Views：234

      Zhihua Dong

        Assistant Professor, Hangzhou Dianzi University

        School of Electronics and Information


        Tel: +86-571-86919135

        Fax: +86-571-86919135

        Email: dongzhihua@hdu.edu.cn



Experience

Visiting Scholar，12/2017-01/2019

University of Maryland College Park, Department of Material Science and Engineering, College park, Maryland, U.S.


Assistant Professor, 06/2014 – present

Hangzhou Dianzi University, School of Electronics and Information, Hangzhou, Zhejiang, China


Assistant Professor, 10/2013 –06/2014

Suzhou Institute of Nano-Tech and Nano-Bionics, Nano-Fabrication Facility, Suzhou, Jiangsu, China


Postdoctoral Research Associate, 03/2011 – 10/2013

Suzhou Institute of Nano-Tech and Nano-Bionics, Suzhou, Jiangsu, China


Education

Ph.D in Microelectronics and Solid-state Electronics, 2011

Department of Microelectronics

Peking University, Beijing, China

Advisor: Prof. Jinyan Wang, Yangyuan Wang and C. P. Wen


M.E in Microelectronics and Solid-state Electronics, 2005

Institute of semiconductor

Shandong Normal University, Jinan, Shandong, China

Advisor: Prof. Chengshan Xue


B.E in Microelectronics, 2000

Department of Electronics Engineering,

Shandong University of Technology (combined into Shandong University), Jinan, Shandong, China



Funded Projects

• PI, “Research on the key technologies on passivation of GaN power semiconductor electronics devices”, NSF, 01/2014-12/2016, ¥250,000


Membership in Professional Societies

 •Institute of Electrical and Electronics Engineers (IEEE) (2015–)


China Patents

  1. Zhihua Dong, Yong Cai, Guohao Yu, Baoshun Zhang, Enhanced mode HEMTs with back-field plate and its processing approaches,  CN201410007469.8

  2. Zhihua Dong, Yong Cai, Guohao Yu, Baoshun Zhang, MIS-HEMTs with back-field plate and its processing approaches CN201410008434.6

  3. Zhihua Dong, Yong Cai, Guohao Yu, Baoshun Zhang, HEMTs with back-field plate and its processing approaches, CN201410008455.8

  4. Zhihua Dong, Yong Cai, Guohao Yu, Baoshun Zhang, Enhanced mode MIS-HEMTs with back-field plate and its processing approaches, CN201410008777.21.

  5. Yong Cai, Guohao Yu, Zhihua Dong, Yue Wang, Baoshun Zhang, Ⅲ-Nitride  E-mode MISHEMTs,CN201110367361.6

  6. Yong Cai, Guohao Yu, Zhihua Dong, Yue Wang, Baoshun Zhang, Ⅲ-Nitride  E-mode HEMTs , CN201110366992.6

  7. Yong Cai, Guohao Yu, Zhihua Dong, Yue Wang, Baoshun Zhang, Ⅲ-Nitride  HEMTs, CN201110367070.7

  8. Yong Cai, Guohao Yu, Zhihua Dong, Yue Wang, Baoshun Zhang, Ⅲ-Nitride  MISHEMTs,CN201110367190.7

  9. Yue Wang, Yong Cai, Guohao Yu, Zhihua Dong, Baoshun Zhang,Semiconductor Devices with high performance,CN 201310138569.X

  10. Zhihua Dong, Jinyan Wang, Yilong Hao, Cheng Paul Wen,Yangyuan Wang,Ohmic Contacts and its Processing approaches for GaN Devices, CN200810212053.4


U.S. Patents

  1. Novel III-V Heterojunction Field Effect Transistor, Zhihua Dong, Zhiqun Cheng, Guohua Liu, Huajie Ke，US Patent. US10283598B2

  2. Group III nitride high electron mobility transistor (HEMT) device, Yong Cai, Guohao Yu, Zhihua Dong,Baoshun Zhang, US Patent. US9070756B2


Journal Publications

  1. Zhili Zhang, Weiyi Li, Kai Fu, Guohao   Yu, Xiaodong Zhang, Yanfei Zhao, Shichuang Sun, Liang Song, Xuguang Deng,   Zheng Xing, Lei Yang, Rongkun Ji, Chunhong Zeng, Yaming Fan, Zhihua Dong, Yong Cai, Baoshun Zhang   AlGaN/GaN MIS-HEMTs of Very-low Vth Hysteresis & Current Collapse with   in-Situ Pre-Deposition Pla**a Nitridation and LPCVD-Si3N4   Gate Insulator, IEEE Electron Device   Letters, 2017, 38(2),   pp. 448~450

  2. Shiqi Li,Guofeng Ren,Md Nadim Ferdous Hoque, Zhihua Dong, Juliusz Warzywoda,Zhaoyang Fan*, Carbonized cellulose paper as an effective interlayer in lithium-sulfur batteries. Applied Surface Science, 2017, 396:637-643.

  3. Mengyuan, Hua, Cheng Liu, Shu   Yang,  Shenghou Liu, Kai Fu, Zhihua   Dong,  Yong Cai,  Baoshun Zhang, Kevin J. Chen,   Characterization of Leakage and Reliability of SiNx Gate Dielectric by   Low-Pressure Chemical Vapor Deposition for GaN-based MIS-HEMTs,IEEE Transactions on Electron Devices, 62(2015), pp.  3215~3222

  4. Mengyuan, Hua, Cheng Liu, Shu Yang,  Shenghou Liu, Kai Fu, Zhihua Dong,  Yong Cai,    Baoshun Zhang, Kevin J. Chen, GaN-Based Metal-Insulator-Semiconductor   High-Electron-Mobility Transistors Using Low-Pressure Chemical Vapor   Deposition SiNx as Gate Dielectric, IEEE   Electron Device Letters, 36(2015),   pp.448~450

  5. Mengyuan, Hua, Cheng Liu, Shu   Yang,  Shenghou Liu,Yunyou Lu, Kai Fu, Zhihua   Dong,  Yong Cai,  Baoshun Zhang, Kevin J. Chen 650-V   GaN-Based MIS-HEMTs Using LPCVD-SiNx as Passivation and Gate Dielectric,IEEE International Symposium   on Power Semiconductor Devices & Ics (2015), pp. 241~ 244

  6. Zhihua Dong, Ronghui Hao, Zhili Zhang，Yong Cai, Baoshun Zhang and Zhiqun Cheng ,IMPACT OF N- PLASMA TREATMENT ON THE CURRENT COLLAPSE OF ALGAN/GAN HEMTS, IEEE 12thInternational Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, Guilin , 2014, pp.1020~1022

  7. Zhihua Dong, Shuxin Tan, Yong Ca, Hongwei Chen, Shenghou Liu, Jicheng Xu, Lu Xue, Guohao Yu, Yue Wang, Desheng Zhao, Keyu Hou, K.J. Chen,  Baoshun Zhang, 5.3A/400V normally-off AlGaN/GaN-on-Si MOS-HEMT with high threshold voltage and large gate swing，Electronics Letters 49 (2013),pp. 221-2

  8. Guohao Yu,  Yong Cai, Yue Wang, Zhihua Dong, Chunhong Zeng, Desheng Zhao, Hua Qin, Baoshun Zhang, A Double-Gate AlGaN/GaN HEMT With Improved Dynamic Performance, IEEE Electron Device Letters, 34(2013), pp 747-749

  9. Guohao Yu,  Yue Wang, Yong Cai, Zhihua  Dong, Chunhong Zeng, Baoshun Zhang, Dynamic Characterizations of AlGaN/GaN HEMTs with Field-plates using a Double-gate Structure, IEEE Electron Device Letters，34(2013), pp.217-9

  10. Zhihua Dong, Jinyan Wang, C. P. Wen, Rumin Gong, ShenghouLiu, Min Yu, YilongHao,Fujun Xu, Bo Shen, Yangyuan Wang, High temperature induced failure in Ti/Al/Ni/Au Ohmic contacts on AlGaN/GaN heterostructure, Microelectronics reliability,52 (2012), pp. 434-438

  11. Zhihua Dong , Jinyan Wang, C.P. Wen, Danian Gong , Ying Li, Min Yu , YilongHao , Fujun Xu ,Bo Shen , Yangyuan Wang, High breakdown AlGaN/GaN MOSHEMT with thermal oxidized Ni/Ti as gate insulator, Solid-State Electron, 54 (2010), pp. 1339–42

  12. Zhihua Dong, Jinyan Wang, Rumin Gong, Shenghou Liu, C. P. Wen, Min Yu, FujunXu,YilongHao, Bo Shen, Yangyuan Wang,Multiple Ti/Al stacks induced thermal stability enhancement inTi/Al/Ni/Au Ohmic contact on AlGaN/GaN heterostructure, IEEE10thInternational Conference on Solid-State and Integrated Circuit Technology (ICSICT) Proceedings, pp. 1359-1361,Shanghai , 2010

  13. Rumin Gong, Jinyan Wang, Zhihua Dong, Shenghou Liu, Min Yu, Cheng P. Wen, YilongHao, Bo Shen, Yong Cai, Baoshun Zhang, Jincheng Zhang, Analysis on the new mechani**s of low-resistance stacked Ti/Al Ohmic contact structure on AlGaN/GaN HEMTs, Journal of Physics D: Applied Physics, 43(2010), pp.395102

  14. Rumin Gong, Jinyan Wang, Shenghou Liu, Zhihua Dong, Min Yu, Cheng P. Wen,  Yong Cai, Baoshun Zhang, Analysis of surface roughness in Ti/Al/Ni/Au Ohmic contact to AlGaN/GaN High Electron Mobility Transistors (HEMTs), Applied Physics Letter,97(2010) 062115

  15. Zhihua Dong, Chengshan Xue, Huizhao Zhuang, Haiyong Gao, Deheng Tian, Yuxin Wu, Synthesis of GaN films on porous silicon substrates, Rare Metals, 25(2006), pp 96-98

  16. Zhihua Dong,  Chengshan Xue, Huizhao Zhuang, Shuyun Wang,  Haiyong Gao, Deheng Tian, Yuxin Wu, Jianting He, Yi’an Liu, Synthesis of three kinds of GaN nanowires through Ga2O3 films’ reaction with ammonia, Physica E: Low-Dimensional Systems and Nanostructures, 27(2005), pp 32-37

  17. Qinqin Wei, Chengshan Xue, Zhencui Sun,  Huizhao Zhuang, Wentian Cao,   Shuyun Wang, Zhihua Dong, Fabrication of large-scale α-Si3N4 nanotubes on Si(111) by hot-wall chemical-vapor-deposition with the assistance of Ga2O3, Applied Surface Science, 229(2004), pp 9-12